• DocumentCode
    2817742
  • Title

    Comparison of TID Response of Micron Technology Single-Level Cell High Density NAND Flash Memories

  • Author

    Nguyen, Duc N. ; Irom, Farokh

  • Author_Institution
    Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
  • fYear
    2010
  • fDate
    20-23 July 2010
  • Firstpage
    4
  • Lastpage
    4
  • Abstract
    Total ionizing dose (TID) response for Micron Technology single-level cell (SLC) 1 Gb, 2 Gb, 4 Gb and 8 Gb NAND flash memories are reported. Scaling effects in TID response is discussed. Floating gates bit error scales with feature size. Also, charge pump TID degradation and standby current improves with scaling.
  • Keywords
    NAND circuits; flash memories; radiation effects; Micron Technology single-level cell; TID; floating gates bit error scale; high density NAND flash memories; scaling effect; total ionizing dose; Charge pumps; Computer architecture; Current measurement; Flash memory; Microprocessors; Nonvolatile memory; Radiation effects;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation Effects Data Workshop (REDW), 2010 IEEE
  • Conference_Location
    Denver, CO
  • ISSN
    2154-0519
  • Print_ISBN
    978-1-4244-8405-8
  • Type

    conf

  • DOI
    10.1109/REDW.2010.5619508
  • Filename
    5619508
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2817742