DocumentCode
2817751
Title
Three Dimensional CMOS Image Sensor Cell Simulation and Optimization
Author
Paik, Kee-Hyun ; Lee, Seok-Ha ; Lyu, Jeong-Ho ; Lee, Keun-Ho ; Park, Yong-Kwan ; Kong, Jeong-Taek
Author_Institution
Advanced Technology Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd., San #24 Nongseo-Ri, Giheung-Eup, Yongin-Si, Gyeonggi-Do, 449-711, Korea (E-mail: keehyun.paik@samsung.com)
fYear
2005
fDate
01-03 Sept. 2005
Firstpage
103
Lastpage
106
Abstract
In this work, we present the results of three-dimensional CMOS image sensor cell simulation. Electrical characteristics of the device are represented comprehensively. The methodology, describing saturation, charge-voltage conversion, and image lag of a CIS cell in a single simulation analysis, is expected to play a key role in future CMOS image sensor cell development.
Keywords
Analytical models; CMOS image sensors; Capacitance; Computational Intelligence Society; Doping profiles; Electrons; Image analysis; Image converters; Photodiodes; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices, 2005. SISPAD 2005. International Conference on
Print_ISBN
4-9902762-0-5
Type
conf
DOI
10.1109/SISPAD.2005.201483
Filename
1562035
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