Title :
Dry etching process in InP Gunn device technology utilizing inductively coupled plasma (ICP) system
Author :
Liu, J.Q. ; Zybura, M.F. ; Pao, Y.C. ; Westerman, R. ; Constantine, C.
Author_Institution :
Santa Clara Univ., CA, USA
Abstract :
In this paper we report on recent progress in 77 GHz InP Gunn device process development. Specifically, utilizing recent advances in the dry etching of InP to define Gunn diode active layer mesas. Unlike previous FeCl3-based photochemical etches, the inductively coupled plasma (ICP) system offers excellent sidewall anisotropy and uniformity. This provides enhanced DC and RF consistency facilitating mass manufacturing of millimeter wave Gunn oscillators
Keywords :
Gunn diodes; Gunn oscillators; III-V semiconductors; indium compounds; millimetre wave oscillators; sputter etching; 77 GHz; Gunn diode active layer mesas; ICP system; InP; InP Gunn device technology; dry etching process; inductively coupled plasma system; millimeter wave Gunn oscillators; sidewall anisotropy; uniformity; Anisotropic magnetoresistance; Diodes; Dry etching; Gunn devices; Indium phosphide; Photochemistry; Plasma applications; Plasma devices; Plasma materials processing; Plasma waves;
Conference_Titel :
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location :
Tsukuba
Print_ISBN :
0-7803-4220-8
DOI :
10.1109/ICIPRM.1998.712433
