DocumentCode
2817772
Title
Time-Domain-Based Modeling of Carrier Transport in Lateral p-i-n Photodiode
Author
Suzuki, Gaku ; Konno, Kohkichi ; Navarro, Dondee ; Sadachika, Norio ; Mizukane, Yoshio ; Matsushima, Osamu ; Miura-Mattausch, Mitiko
Author_Institution
Graduate School of Advanced Sciences of Matter, Hiroshima University, 1-3-1 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8530 Japan. E-mail: gaku@hiroshima-u.ac.jp
fYear
2005
fDate
01-03 Sept. 2005
Firstpage
107
Lastpage
110
Abstract
Carrier transport mechanism in a lateral p-i-n photodiode (PD) has been described analytically in time domain by adopting a coordinate transformation, where carriers are treated to be stationary in the coordinate system. The developed model correctly predicts the measured delayed response of a PD to a 100ps-Gaussian pulse input, which is not observed in models employing stationary and constant electric field approximations. The inherent PD delay predicted by the model is reflected in the output transient characteristics of an inverter circuit with the PD response used as input.
Keywords
Circuit simulation; Cutoff frequency; Delay; Optical devices; Optical interconnections; Optical pulses; PIN photodiodes; Predictive models; Pulse measurements; Time domain analysis;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices, 2005. SISPAD 2005. International Conference on
Print_ISBN
4-9902762-0-5
Type
conf
DOI
10.1109/SISPAD.2005.201484
Filename
1562036
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