Title :
Power-handling capability of W-band InGaAs pin diode switches
Author :
Alekseev, Egor ; Cui, Delong ; Pavlidis, Dimitris
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Abstract :
The power-handling capability of InGaAs pin diodes is reported and compared to that of GaAs pin diodes. The trade-off between power handling, high frequency performance, and bias conditions is considered. W-band InGaAs pin diode monolithic switches were fabricated using coplanar-waveguide technology, and their large-signal characteristics measured using a W-band load-pull characterization system are reported for the first time
Keywords :
III-V semiconductors; coplanar waveguide components; gallium arsenide; indium compounds; microwave switches; millimetre wave diodes; p-i-n diodes; power semiconductor diodes; power semiconductor switches; 70 to 80 GHz; InGaAs; W-band InGaAs pin diode monolithic switches; W-band InGaAs pin diode switches; W-band load-pull characterization system; bias conditions; coplanar-waveguide technology; high frequency performance; large-signal characteristics; power-handling capability; Content addressable storage; Diodes; Frequency; Gold; HEMTs; Indium gallium arsenide; Insertion loss; MODFETs; Parasitic capacitance; Switches;
Conference_Titel :
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location :
Tsukuba
Print_ISBN :
0-7803-4220-8
DOI :
10.1109/ICIPRM.1998.712436
