DocumentCode
2817836
Title
High-efficient dual-junction InGaP/GaAs solar cells with improved tunnel interconnect
Author
Agui, T. ; Takamoto, T. ; Ikeda, E. ; Kurita, H.
Author_Institution
Central Res. Lab., Japan Energy Corp., Saitama, Japan
fYear
1998
fDate
11-15 May 1998
Firstpage
203
Lastpage
206
Abstract
We report improvements of the InGaP-GaAs tandem cell performance by introducing an InGaP tunnel junction with sandwiched AlInP layers. A high conversion efficiency of 30.28% was achieved for 2 cm×2 cm cell, which is the world record for the terrestrial sun-light condition. The uniformity of the tandem solar cell was also improved
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; solar cells; tunnelling; 2 cm; 30.28 percent; AlInP; InGaP tunnel junction; InGaP-GaAs; InGaP/GaAs tandem cell performance; high conversion efficiency; high-efficiency dual-junction InGaP/GaAs solar cells; sandwiched AlInP layers; tandem solar cell; terrestrial sun-light condition; tunnel interconnect; uniformity; Gallium arsenide; Laboratories; Optical materials; Photoluminescence; Photovoltaic cells; Pressure control; Renewable energy resources; Weight control; Wideband; Zinc;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location
Tsukuba
ISSN
1092-8669
Print_ISBN
0-7803-4220-8
Type
conf
DOI
10.1109/ICIPRM.1998.712437
Filename
712437
Link To Document