Composite channel HEMTs for millimeter-wave power applications

Author

Chevalier, P. ; Wallart, X. ; Mollot, F. ; Bonte, B ; Fauquembergue, R.

Author_Institution

CNRS, Inst. d´´Electron. et de Microelectron. du Nord, Villeneuve d´´Ascq, France

fYear

1998

fDate

11-15 May 1998

Firstpage

207

Lastpage

210

Abstract

The InGaAs-InP composite channel HEMT is an interesting way to overcome the strong impact ionization in the InGaAs channel which is one of the main limitations of InP based HEMT. We present in this paper an experimental quantification of improvements provided by a composite channel. Using an InGaAs/InP composite channel, device output conductance was reduced from 145 mS/mm to 85 mS/mm, transconductance was enhanced from 1 S/mm to 1.2 S/mm and cut-off frequency f_MAX increased by 50%. Influence of the feedback capacitance on RF performance has also been investigated through the comparison of passivated and nonpassivated devices. So, 0.15 μm gate length InGaAsInP composite channel HEMT show an f_T of 151 GHz and an f_MAX of 225 GHz. We also present state of the art power performance at 60 GHz of an InGaAs/InP/n+-InP composite channel HEMT which exhibits an output power density of 355 mW/mm, 12% power-added-efficiency (PAE) and 6.2 dB of linear gain

Keywords

III-V semiconductors; capacitance; electrical conductivity; feedback; gallium arsenide; impact ionisation; indium compounds; millimetre wave field effect transistors; millimetre wave power transistors; power HEMT; semiconductor device measurement; 0.15 mum; 1 to 1.2 S/mm; 12 percent; 151 GHz; 225 GHz; 6.2 dB; 60 GHz; 85 to 145 mS/mm; InGaAs-InP; InGaAs/InP composite channel HEMT; RF performance; composite channel; composite channel HEMTs; cut-off frequency; feedback capacitance; impact ionization; linear gain; millimeter-wave power applications; nonpassivated devices; output conductance; output power density; passivated devices; power-added-efficiency; transconductance; Capacitance; Cutoff frequency; Feedback; HEMTs; Impact ionization; Indium gallium arsenide; Indium phosphide; MODFETs; Radio frequency; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1998 International Conference on

Conference_Location

Tsukuba

ISSN

1092-8669

Print_ISBN

0-7803-4220-8

Type

conf

DOI

10.1109/ICIPRM.1998.712438

Filename

712438