AlInAs/GaInAs metamorphic HEMT´s on GaAs substrate: from material to device

Author

Cordier, Y. ; Bollaert, S. ; Zaknoune, M. ; diPersio, J. ; Ferre, D.

Author_Institution

CNRS, Inst. d´´Electron. et de Microelectron. du Nord, Villeneuve d´´Ascq, France

fYear

1998

fDate

11-15 May 1998

Firstpage

211

Lastpage

214

Abstract

AlInAs/GaInAs heterojunctions offer a wide range of applications for electronic and optoelectronic devices. Also heterostructures grown on lattice mismatched substrates allow one to extend the range of composition in the structures and to exploit enhanced properties, provided that the crystalline perfection of the layers as well as electrical quality are preserved. As an example, the development of lattice mismatched AlInAs/GaInAs high electron mobility transistors on high-quality GaAs substrates (metamorphic HEMT) is of primary interest for millimeter-wave devices

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; millimetre wave field effect transistors; AlInAs-GaInAs; AlInAs/GaInAs heterojunctions; AlInAs/GaInAs metamorphic HEMT; GaAs; GaAs substrate; heterostructures; high-quality GaAs substrates; lattice mismatched AlInAs/GaInAs high electron mobility transistors; lattice mismatched substrates; metamorphic HEMT; millimeter-wave devices; Crystalline materials; Crystallization; Gallium arsenide; HEMTs; Heterojunctions; Lattices; MODFETs; Millimeter wave devices; Optoelectronic devices; mHEMTs;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1998 International Conference on

Conference_Location

Tsukuba

ISSN

1092-8669

Print_ISBN

0-7803-4220-8

Type

conf

DOI

10.1109/ICIPRM.1998.712439

Filename

712439