Title :
First-Principle Computation of Relaxation Times in Semiconductors for Low and High Electric Fields
Author :
Brugger, Simon C. ; Schenk, Andreas
Author_Institution :
Integrated Systems Laboratory, Swiss Fed. Inst. of Technology, Gloriastr. 35, CH-8092 Zürich, Switzerland. e-mail: brugger@iis.ee.ethz.ch, Tel: +41 44 632 2348, Fax +41 44 632 1194
Abstract :
In this paper we present a method to compute exact relaxation times for any moments of the Boltzmann equation. The method is valid for any electric field and is particularly useful in the case of vanishingly small field intensities. After a theoretical explanation, the method is applied to a full-band model for electrons and holes in silicon. A strong dependence of the relaxation times on the doping concentration is shown, which is in contradictions to popular beliefs.
Keywords :
Boltzmann equation; Charge carrier processes; Distributed computing; Distribution functions; Doping; Hydrodynamics; ISO; Laboratories; Semiconductor process modeling; Silicon;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2005. SISPAD 2005. International Conference on
Print_ISBN :
4-9902762-0-5
DOI :
10.1109/SISPAD.2005.201495
