Title :
Room temperature cw operation in GaInAsP/InP microdisk laser with record low threshold of 150 μA
Author :
Fujita, M. ; Inoshita, K. ; Baba, T.
Author_Institution :
Div. of Electr. & Comput. Eng., Yokohama Nat. Univ., Japan
Abstract :
We have achieved the cw lasing operation in a GaInAsP/InP microdisk injection laser at room temperature for the first time. A record low threshold current of 150 μA was obtained for the lasing wavelength of 1.63 μm. It was mainly due to the reduction of scattering loss at the disk edge and that of threshold current density
Keywords :
III-V semiconductors; current density; gallium arsenide; gallium compounds; indium compounds; microdisc lasers; semiconductor lasers; 1.63 mum; 150 muA; 293 K; CW lasing operation; GaInAsP-InP; injection laser; microdisk laser; threshold current; Argon; Etching; Indium phosphide; Laser modes; Plasma measurements; Power lasers; Semiconductor lasers; Temperature; Thermal resistance; Threshold current;
Conference_Titel :
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location :
Tsukuba
Print_ISBN :
0-7803-4220-8
DOI :
10.1109/ICIPRM.1998.712445
