DocumentCode
2817978
Title
Room temperature cw operation in GaInAsP/InP microdisk laser with record low threshold of 150 μA
Author
Fujita, M. ; Inoshita, K. ; Baba, T.
Author_Institution
Div. of Electr. & Comput. Eng., Yokohama Nat. Univ., Japan
fYear
1998
fDate
11-15 May 1998
Firstpage
235
Lastpage
238
Abstract
We have achieved the cw lasing operation in a GaInAsP/InP microdisk injection laser at room temperature for the first time. A record low threshold current of 150 μA was obtained for the lasing wavelength of 1.63 μm. It was mainly due to the reduction of scattering loss at the disk edge and that of threshold current density
Keywords
III-V semiconductors; current density; gallium arsenide; gallium compounds; indium compounds; microdisc lasers; semiconductor lasers; 1.63 mum; 150 muA; 293 K; CW lasing operation; GaInAsP-InP; injection laser; microdisk laser; threshold current; Argon; Etching; Indium phosphide; Laser modes; Plasma measurements; Power lasers; Semiconductor lasers; Temperature; Thermal resistance; Threshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location
Tsukuba
ISSN
1092-8669
Print_ISBN
0-7803-4220-8
Type
conf
DOI
10.1109/ICIPRM.1998.712445
Filename
712445
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