DocumentCode
2818015
Title
One-Dimensional Corrected Drift-Diffusion Model: McKelvey´s Method Extended with Accelerated-Multi-Flux
Author
Hogyoku, Michiru
Author_Institution
IC Development Department, Seiko Epson Corporation, 281 Fujimi, Fujimi-machi, Suwa-gun, Nagano-ken 399-0293, Japan. E-mail: hogyoku. michiru@exc.epson.co.jp
fYear
2005
fDate
01-03 Sept. 2005
Firstpage
163
Lastpage
166
Abstract
By introducing accelerated-multi-flux into McKelvey\´s one-flux method, we have developed a novel macroscopic carrier transport model in one-dimensional steady-state. The developed model, referred to as "Corrected Drift-Diffusion Model", takes into account both velocity overshoot and ballistic transport of carriers. It is revealed that introducing accelerated-multi-flux under two fundamental hypotheses requires a conventional drift-diffusion model to be corrected only with additional carrier concentration calculation. Numerical calculation for one-dimensional n+-n-n+ structure demonstrates that the additional carrier concentration calculation substantially affects self-consistent electrostatics.
Keywords
Acceleration; Ballistic transport; Electronic mail; Electrostatics; Energy conservation; Integrated circuit modeling; Reflection; Scattering; Steady-state; Temperature distribution;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices, 2005. SISPAD 2005. International Conference on
Print_ISBN
4-9902762-0-5
Type
conf
DOI
10.1109/SISPAD.2005.201498
Filename
1562050
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