• DocumentCode
    2818015
  • Title

    One-Dimensional Corrected Drift-Diffusion Model: McKelvey´s Method Extended with Accelerated-Multi-Flux

  • Author

    Hogyoku, Michiru

  • Author_Institution
    IC Development Department, Seiko Epson Corporation, 281 Fujimi, Fujimi-machi, Suwa-gun, Nagano-ken 399-0293, Japan. E-mail: hogyoku. michiru@exc.epson.co.jp
  • fYear
    2005
  • fDate
    01-03 Sept. 2005
  • Firstpage
    163
  • Lastpage
    166
  • Abstract
    By introducing accelerated-multi-flux into McKelvey\´s one-flux method, we have developed a novel macroscopic carrier transport model in one-dimensional steady-state. The developed model, referred to as "Corrected Drift-Diffusion Model", takes into account both velocity overshoot and ballistic transport of carriers. It is revealed that introducing accelerated-multi-flux under two fundamental hypotheses requires a conventional drift-diffusion model to be corrected only with additional carrier concentration calculation. Numerical calculation for one-dimensional n+-n-n+ structure demonstrates that the additional carrier concentration calculation substantially affects self-consistent electrostatics.
  • Keywords
    Acceleration; Ballistic transport; Electronic mail; Electrostatics; Energy conservation; Integrated circuit modeling; Reflection; Scattering; Steady-state; Temperature distribution;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Simulation of Semiconductor Processes and Devices, 2005. SISPAD 2005. International Conference on
  • Print_ISBN
    4-9902762-0-5
  • Type

    conf

  • DOI
    10.1109/SISPAD.2005.201498
  • Filename
    1562050