Title :
Ultrafast all-optical switching at 1.3 μm/1.55 μm using a novel InGaAs/AlAsSb/InP coupled double quantum well structure for intersubband transitions
Author :
Yoskida, H. ; Mozume, T. ; Neogi, A. ; Wada, O.
Author_Institution :
FESTA Lab., Femtosecond. Technol. Res. Assoc., Ibaraki, Japan
Abstract :
A coupled double quantum well (C-DQW) structure enabling ultrafast, multi-wavelength, all-optical modulation using intersubband transitions is proposed. It has been shown from the calculation of absorption spectrum and relaxation characteristics that the InGaAs/AlAsSb C-DQW structure is desirable for applications in all-optical switches for multi-wavelength operation at near-infrared wavelengths down to 1.3 μm. The capability of ultrafast all-optical switching/wavelength conversion between 1.3 μm and 1.55 μm has also been shown
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high-speed optical techniques; indium compounds; optical modulation; optical switches; optical wavelength conversion; semiconductor quantum wells; visible spectra; 1.3 mum; 1.55 mum; InGaAs-AlAsSb; absorption spectrum; coupled double quantum well; intersubband transitions; multi-wavelength operation; near-infrared wavelengths; relaxation characteristics; ultrafast all-optical switching; wavelength conversion; Absorption; Communication switching; Energy states; Indium gallium arsenide; Indium phosphide; Laboratories; Optical coupling; Optical modulation; Optical wavelength conversion; Ultrafast optics;
Conference_Titel :
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location :
Tsukuba
Print_ISBN :
0-7803-4220-8
DOI :
10.1109/ICIPRM.1998.712448
