DocumentCode
2818024
Title
Threshold Voltage Model of Single Gate SOI MOSFETs Derived from Asymptotic Method
Author
Aoyama, Junichi ; Takani, Toshiyuki ; Toyabe, Toru ; Kalachev, Leonid
Author_Institution
Toyo Univ. Bio-Nano Electronics Research Center, Kawagoe, Saitama, 350-8585 Japan
fYear
2005
fDate
01-03 Sept. 2005
Firstpage
167
Lastpage
170
Abstract
A compact model for threshold voltages of SOI MOSFETs with ultra-thin top Si layer is presented. The model is based on potential distribution solution of the two-dimensional Poisson equation using an asymptotic method. The validity of the model is verified by comparison with results of two-dimensional numerical simulations.
Keywords
Channel bank filters; Circuit simulation; Low voltage; MOS devices; MOSFETs; Mathematical model; Numerical simulation; Poisson equations; Space charge; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices, 2005. SISPAD 2005. International Conference on
Print_ISBN
4-9902762-0-5
Type
conf
DOI
10.1109/SISPAD.2005.201499
Filename
1562051
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