Title :
Threshold Voltage Model of Single Gate SOI MOSFETs Derived from Asymptotic Method
Author :
Aoyama, Junichi ; Takani, Toshiyuki ; Toyabe, Toru ; Kalachev, Leonid
Author_Institution :
Toyo Univ. Bio-Nano Electronics Research Center, Kawagoe, Saitama, 350-8585 Japan
Abstract :
A compact model for threshold voltages of SOI MOSFETs with ultra-thin top Si layer is presented. The model is based on potential distribution solution of the two-dimensional Poisson equation using an asymptotic method. The validity of the model is verified by comparison with results of two-dimensional numerical simulations.
Keywords :
Channel bank filters; Circuit simulation; Low voltage; MOS devices; MOSFETs; Mathematical model; Numerical simulation; Poisson equations; Space charge; Threshold voltage;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2005. SISPAD 2005. International Conference on
Print_ISBN :
4-9902762-0-5
DOI :
10.1109/SISPAD.2005.201499
