Title :
New method for reduction of carrier lifetime in semiconductor optical amplifier using assist light
Author :
Tsurusawa, Munefumi ; Usami, Masashi ; Matsushima, Yuichi
Author_Institution :
KDD Kamifukuoka R&D Labs., Saitama, Japan
Abstract :
We propose a novel method for reducing the absorption recovery time in an SOA which acts as saturable absorber. The reduction of the recovery time was successfully demonstrated by stimulated recombination due to a CW additional light (assist light). We also optimize the injection current and the wavelength of the assist light for the reduction effect. The obtained minimum recovery time was less than 50 ps. This method can be applied to ultra-high repetition-rate all optical processing
Keywords :
III-V semiconductors; carrier lifetime; gallium arsenide; gallium compounds; high-speed optical techniques; indium compounds; optical saturable absorption; semiconductor optical amplifiers; InGaAsP; absorption recovery time; all optical processing; assist light; carrier lifetime; injection current; saturable absorber; semiconductor optical amplifier; stimulated recombination; Absorption; Charge carrier lifetime; High speed optical techniques; Laser excitation; Optical pumping; Radiative recombination; Semiconductor optical amplifiers; Spontaneous emission; Steady-state; Stimulated emission;
Conference_Titel :
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location :
Tsukuba
Print_ISBN :
0-7803-4220-8
DOI :
10.1109/ICIPRM.1998.712451
