DocumentCode :
2818086
Title :
Design and fabrication of a waveguide photodiode for 1.55-μm band access receivers
Author :
Takeuchi, T. ; Nakata, T. ; Tachigori, M. ; Makita, E. ; Taguchi, E.
Author_Institution :
NEC Optoelectron. & High Frequency Dev. Res. Lab., Ibaraki, Japan
fYear :
1998
fDate :
11-15 May 1998
Firstpage :
262
Lastpage :
265
Abstract :
A waveguide photodiode that can be used in 1.55-μm-band access receivers was designed and fabricated. We simulated the optical coupling characteristics, focusing especially on the external quantum efficiency and coupling tolerance for different input spot sizes and for different waveguide-layer structures. The results clearly showed that both high efficiency and high tolerance can be obtained in an optimized symmetric structure for a hemispherically ended fiber. The fabricated device, optimized in the basis of the simulation, showed excellent characteristics such as an external quantum efficiency of more than 95% and a coupling tolerance of 6.5 μm in the vertical direction
Keywords :
infrared detectors; integrated optoelectronics; optical design techniques; optical fabrication; optical fibre couplers; optical planar waveguides; optical receivers; photodiodes; 1.55 mum; 1.55-μm band access receivers; 95 percent; coupling tolerance; design; external quantum efficiency; fabrication; hemispherically ended fiber; input spot sizes; optical coupling characteristics; optimized symmetric structure; waveguide photodiode; waveguide-layer structures; Assembly; Optical coupling; Optical device fabrication; Optical fiber devices; Optical planar waveguides; Optical receivers; Optical waveguides; Photodiodes; Planar waveguides; Silicon compounds;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location :
Tsukuba
ISSN :
1092-8669
Print_ISBN :
0-7803-4220-8
Type :
conf
DOI :
10.1109/ICIPRM.1998.712452
Filename :
712452
Link To Document :
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