DocumentCode :
2818157
Title :
Simulation of Drain Current Reduction Caused by Process-Induced Stress
Author :
Uchida, T. ; Takashino, H. ; Tanizawa, M. ; Okagaki, T. ; Ishikawa, K. ; Eimori, T. ; Ohji, Y.
Author_Institution :
Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo, 664-0005, Japan
fYear :
2005
fDate :
01-03 Sept. 2005
Firstpage :
199
Lastpage :
202
Keywords :
Anisotropic magnetoresistance; Capacitive sensors; Circuit simulation; Crystallography; Isolation technology; Oxidation; Silicon; Temperature measurement; Tensile stress; Viscosity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2005. SISPAD 2005. International Conference on
Print_ISBN :
4-9902762-0-5
Type :
conf
DOI :
10.1109/SISPAD.2005.201507
Filename :
1562059
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2818157
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