Title :
Low damage dry-etched grating on a MQW active layer and dislocation-free InP regrowth for 1.55 μm complex-coupled DFB lasers fabrication
Author :
Talneau, A. ; Bouadma, N. ; Lebellego, Y. ; Slempkes, S. ; Ougazzaden, A. ; Patriarche, G. ; Sermage, B.
Author_Institution :
France Telecom, CNET, Bagneux, France
Abstract :
A grating dry-etched through the upper wells of an MQW active layer has been characterized before and after regrowth. TEM observation and carrier lifetime measurements have shown growth-free defects of the epitaxial layers. As a consequence, quasi 100% monomode oscillation on λ+1 mode has been achieved on complex-coupled DFB lasers fabricated with such a grating
Keywords :
III-V semiconductors; carrier lifetime; distributed feedback lasers; gallium arsenide; gallium compounds; holographic gratings; indium compounds; quantum well lasers; semiconductor epitaxial layers; transmission electron microscopy; 1.55 mum; InGaAsP; InP; MQW active layer; TEM; carrier lifetime; complex-coupled DFB lasers; dislocation-free InP regrowth; dry-etched grating; epitaxial layers; quasi 100% monomode oscillation; Etching; Gratings; Indium phosphide; Laser modes; Laser tuning; Optical device fabrication; Quantum well devices; Quantum well lasers; Resists; Silicon compounds;
Conference_Titel :
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location :
Tsukuba
Print_ISBN :
0-7803-4220-8
DOI :
10.1109/ICIPRM.1998.712459
