Title :
Surface-grating Bragg reflector lasers using deeply etched groove formed by reactive beam etching
Author :
Oku, Satoshi ; Kondo, Susumu ; Noguchi, Yoshio ; Hirono, Takushi ; Nakao, Masashi ; Tamamura, Toshiaki
Author_Institution :
NTT Opto-Electron. Labs., Kanagawa, Japan
Abstract :
Surface-grating InGaAlAs MQW distributed Bragg reflector (DBR) lasers were fabricated in a single-growth step. Deep-grating grooves in the 1.15-μm thick clad layer were formed by Br2-N2 reactive beam etching. The reflectivity and the coupling coefficient of a 35-μm-long DBR mirror provided by XOO-nm-deep grooves were evaluated to be about 0.3 and 230 cm-1-400 cm -1. Between 15 and 55°C, the measured temperature dependence of the lasing wavelength is about 0.1 nm/°C which is one-fifth the dependence of a Fabry-Perot type laser
Keywords :
III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; etching; gallium arsenide; indium compounds; quantum well lasers; reflectivity; semiconductor epitaxial layers; 15 to 55 degC; DBR mirror; InGaAlAs; MQW lasers; coupling coefficient; deeply etched groove; lasing wavelength; reactive beam etching; reflectivity; surface-grating Bragg reflector lasers; temperature dependence; Distributed Bragg reflectors; Etching; Laser beams; Mirrors; Quantum well devices; Reflectivity; Surface emitting lasers; Temperature dependence; Temperature measurement; Wavelength measurement;
Conference_Titel :
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location :
Tsukuba
Print_ISBN :
0-7803-4220-8
DOI :
10.1109/ICIPRM.1998.712462
