Analysis and Simulation of Self-Heating Effects on RF LDMOS Devices

This paper presents a study of the temperature and self heating effects on RF LDMOS devices. A new electro-thermal model is implemented in Agilent´s ADS, using a Symbolic Defined Device (SDD). The proposed model takes into account the thermal effects and the influence of temperature on the I-V and C-V characteristics, by providing three thermal resistances and three thermal capacitances, which represent the heat flow from the chip to the ambient air (thermal network). The new model is thoroughly assessed against extensive 2-D simulations performed using a numerical device model. The results indicate a good agreement with all operating conditions.