All epitaxial single-fused 1.55 μm vertical cavity laser based on an InP Bragg reflector

Author

Rapp, S. ; Salomonsson, F. ; Streubel, K. ; Mogg, S. ; Wennekes, F. ; Bentell, J. ; Hammar, M.

Author_Institution

Dept. of Electron., R. Inst. of Technol., Stockholm, Sweden

fYear

1998

fDate

11-15 May 1998

Firstpage

303

Lastpage

306

Abstract

We have realised all epitaxial 1.55 μm vertical cavity lasers by employing a single wafer-fusion step. The laser structure is fabricated by fusing a 32 period p-doped (C) AlGaAs/GaAs top mirror to a half-cavity structure consisting of a 50 period n-doped (Si) GaInAsP/InP bottom mirror and 9 QW GaInAsP-active material. Laser mesas are fabricated using a wet etching procedure for the top mirror. The top mirror also contains an AlAs layer for oxidation for current confinement. The lasers operate pulsed for temperatures up to 40°C and at pulse lengths of 10 μs up to 5°C. The minimum threshold current density at room temperature is 1.8 kA/cm² for a device diameter of 55 μm. Compared to non-oxidised laser diodes, the oxidation decreases the threshold currents significantly

Keywords

III-V semiconductors; current density; etching; indium compounds; laser cavity resonators; oxidation; quantum well lasers; semiconductor epitaxial layers; surface emitting lasers; 1.55 mum; 293 K; AlGaAs-GaAs; AlGaAs/GaAs top mirror; GaInAsP-InP; GaInAsP/InP bottom mirror; InP; InP Bragg reflector; all epitaxial single-fused laser; current confinement; half-cavity structure; oxidation; single wafer-fusion; threshold current density; vertical cavity laser; wet etching; Diode lasers; Gallium arsenide; Indium phosphide; Mirrors; Optical materials; Optical pulses; Oxidation; Temperature; Threshold current; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1998 International Conference on

Conference_Location

Tsukuba

ISSN

1092-8669

Print_ISBN

0-7803-4220-8

Type

conf

DOI

10.1109/ICIPRM.1998.712463

Filename

712463