Title :
All epitaxial single-fused 1.55 μm vertical cavity laser based on an InP Bragg reflector
Author :
Rapp, S. ; Salomonsson, F. ; Streubel, K. ; Mogg, S. ; Wennekes, F. ; Bentell, J. ; Hammar, M.
Author_Institution :
Dept. of Electron., R. Inst. of Technol., Stockholm, Sweden
Abstract :
We have realised all epitaxial 1.55 μm vertical cavity lasers by employing a single wafer-fusion step. The laser structure is fabricated by fusing a 32 period p-doped (C) AlGaAs/GaAs top mirror to a half-cavity structure consisting of a 50 period n-doped (Si) GaInAsP/InP bottom mirror and 9 QW GaInAsP-active material. Laser mesas are fabricated using a wet etching procedure for the top mirror. The top mirror also contains an AlAs layer for oxidation for current confinement. The lasers operate pulsed for temperatures up to 40°C and at pulse lengths of 10 μs up to 5°C. The minimum threshold current density at room temperature is 1.8 kA/cm2 for a device diameter of 55 μm. Compared to non-oxidised laser diodes, the oxidation decreases the threshold currents significantly
Keywords :
III-V semiconductors; current density; etching; indium compounds; laser cavity resonators; oxidation; quantum well lasers; semiconductor epitaxial layers; surface emitting lasers; 1.55 mum; 293 K; AlGaAs-GaAs; AlGaAs/GaAs top mirror; GaInAsP-InP; GaInAsP/InP bottom mirror; InP; InP Bragg reflector; all epitaxial single-fused laser; current confinement; half-cavity structure; oxidation; single wafer-fusion; threshold current density; vertical cavity laser; wet etching; Diode lasers; Gallium arsenide; Indium phosphide; Mirrors; Optical materials; Optical pulses; Oxidation; Temperature; Threshold current; Wet etching;
Conference_Titel :
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location :
Tsukuba
Print_ISBN :
0-7803-4220-8
DOI :
10.1109/ICIPRM.1998.712463
