Linearity Analysis of RF LDMOS Devices Utilizing Harmonic Balance Device Simulation

Linearity is one of the most important characteristics for current and next-generation RF power devices for wireless communication. In this work, linearity of power LDMOS devices is analysed by using a unique harmonic balance device simulator. Sweet-spots in the third order intermodulation distortion product (IM3) are explained and found to be in agreement with measurements and compact modeling. For demonstration of the simulation methodology, a change in the lightly doped drain (LDD) region doping concentration was performed and the effect on linearity was analysed.