DocumentCode
2818313
Title
Linearity Analysis of RF LDMOS Devices Utilizing Harmonic Balance Device Simulation
Author
Tornblad, Olof ; Ito, Choshu ; Rotella, Francis ; Ma, Gordon ; Dutton, Robert W.
Author_Institution
Infineon Technologies North America Corp., 18275 Serene Drive, Morgan Hill, CA 95037, USA. e-mail: olof.tornblad@infineon.com
fYear
2005
fDate
01-03 Sept. 2005
Firstpage
243
Lastpage
246
Abstract
Linearity is one of the most important characteristics for current and next-generation RF power devices for wireless communication. In this work, linearity of power LDMOS devices is analysed by using a unique harmonic balance device simulator. Sweet-spots in the third order intermodulation distortion product (IM3) are explained and found to be in agreement with measurements and compact modeling. For demonstration of the simulation methodology, a change in the lightly doped drain (LDD) region doping concentration was performed and the effect on linearity was analysed.
Keywords
Analytical models; Distortion measurement; Doping; Harmonic analysis; Intermodulation distortion; Linearity; Power system harmonics; Radio frequency; Semiconductor process modeling; Wireless communication;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices, 2005. SISPAD 2005. International Conference on
Print_ISBN
4-9902762-0-5
Type
conf
DOI
10.1109/SISPAD.2005.201518
Filename
1562070
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