DocumentCode
2818396
Title
Physics and Performance of Phase Change Memories
Author
Lacaita, A.L.
Author_Institution
DEI - Politecnico di Milano & IU.NET, Piazza L. da Vinci, 32 20133, Milano - Italy. e-mail andrea.lacaita@polimi.it
fYear
2005
fDate
01-03 Sept. 2005
Firstpage
267
Lastpage
270
Abstract
Phase change memories (PCM) are considered promising candidates for the replacement of non-volatile Flash technology at the nanoscale. The paper reviews the physics of PCM operation, the scaling potentials of these devices, some options recently proposed for the cell structure, the main challenges for the PCM to become fully competitive with standard Flash technology.
Keywords
Amorphous materials; Crystallization; Electrons; Heating; Nonvolatile memory; Optical materials; Paper technology; Phase change materials; Phase change memory; Physics;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices, 2005. SISPAD 2005. International Conference on
Print_ISBN
4-9902762-0-5
Type
conf
DOI
10.1109/SISPAD.2005.201524
Filename
1562076
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