Title :
Physics and Performance of Phase Change Memories
Author_Institution :
DEI - Politecnico di Milano & IU.NET, Piazza L. da Vinci, 32 20133, Milano - Italy. e-mail andrea.lacaita@polimi.it
Abstract :
Phase change memories (PCM) are considered promising candidates for the replacement of non-volatile Flash technology at the nanoscale. The paper reviews the physics of PCM operation, the scaling potentials of these devices, some options recently proposed for the cell structure, the main challenges for the PCM to become fully competitive with standard Flash technology.
Keywords :
Amorphous materials; Crystallization; Electrons; Heating; Nonvolatile memory; Optical materials; Paper technology; Phase change materials; Phase change memory; Physics;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2005. SISPAD 2005. International Conference on
Print_ISBN :
4-9902762-0-5
DOI :
10.1109/SISPAD.2005.201524
