DFB-DCPBH InGaAsP/InP lasers for 1550 nm optical communication systems

Author

Neto, Rubens Amaral ; De Faria, Ildefonso F., Jr. ; Sachs, A.C. ; De Carvalho, Wilson, Jr. ; Caumo, Jose R. ; Rego, Antonio C G Bordeaux

fYear

1990

fDate

3-6 Sep 1990

Firstpage

446

Lastpage

453

Abstract

Room-temperature CW (continuous-wave) operation of distributed feedback (DFB) double channel planar buried heterostructure (DCPBH) InGaAsP, InP lasers emitting in the 1550-nm wavelength region has been achieved. Lasing characteristics and wave propagation in a five-layer DFB waveguide were analyzed to design low threshold current and stable single longitudinal/transversal mode operation. DFB-DCPBH structures with second-order corrugation were prepared by a two-step liquid-phase epitaxial growth process. A threshold current of 50 mA at 25°C and stable single longitudinal mode operation over a wide range of driving current and temperature have been obtained. Linewidth was measured both in DC conditions and in modulated conditions up to 500 MHz

Keywords

III-V semiconductors; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; liquid phase epitaxial growth; optical communication equipment; semiconductor junction lasers; 1550 nm; 25 degC; 50 mA; 500 MHz; CW; DC conditions; DCPBH; DFB laser; DFB waveguide; III-V semiconductors; InGaAsP-InP; continuous-wave; double channel planar buried heterostructure; lasing characteristics; linewidth; liquid-phase epitaxial growth; longitudinal/transversal mode operation; low current operation; modulated conditions; optical communication systems; room temperature operation; second-order corrugation; wave propagation; Distributed feedback devices; Epitaxial growth; Indium phosphide; Laser feedback; Laser modes; Optical fiber communication; Optical propagation; Optical waveguides; Threshold current; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Telecommunications Symposium, 1990. ITS '90 Symposium Record., SBT/IEEE International

Conference_Location

Rio de Janeiro

Type

conf

DOI

10.1109/ITS.1990.175645

Filename

175645