Title :
A 3-dimensional particle device simulator; HyDeLEOSMC and its application to a FinFET
Author :
Ohkura, Y. ; Suzuki, C. ; Enda, T. ; Takashino, H. ; Ishikawa, H. ; Kojima, T. ; Wada, T.
Author_Institution :
Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki, 305-8569 JAPAN. Email: ohkura@selete.co.jp
Abstract :
A 2 and 3 dimensional ensemble Monte Carlo device simulator is developed and applied to FinFET analysis by using `realistic´ number of electrons within the channel of actual device. The result of transient fluctuation of electron numbers, currents, and distributions of potential and electron are shown.
Keywords :
Analytical models; Computational modeling; Electrons; FinFETs; Fluctuations; Lead compounds; Monte Carlo methods; Optical scattering; Poisson equations; Silicon;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2005. SISPAD 2005. International Conference on
Print_ISBN :
4-9902762-0-5
DOI :
10.1109/SISPAD.2005.201529
