DocumentCode
2818506
Title
Comparison between observed and theoretically determined SEU rates in the TEXAS TMS4416 DRAMs on-board the UoSAT-2 micro-satellite
Author
Oldfield, M.K. ; Underwood, C.I.
Author_Institution
Centre for Satellite Eng. Res., Surrey Univ., Guildford, UK
fYear
1997
fDate
15-19 Sep 1997
Firstpage
499
Lastpage
503
Abstract
A single event upset (SEU) prediction tool, PRISM (Protons In Semi-conductor Materials) has been used to model the proton induced upset rate in Texas TMS4416 DRAMs on-board the UoSAT-2 micro-satellite. Good agreement is found between the observed and theoretically determined SEU and MBU (multiple-bit upset) rates for this device
Keywords
DRAM chips; proton effects; space vehicle electronics; DRAM; PRISM; TEXAS TMS4416; UoSAT-2 micro-satellite; on-board electronics; proton induces SEU rate; semiconductor material; single event upset; Design engineering; Digital communication; Error correction codes; Low earth orbit satellites; MOS devices; Payloads; Predictive models; Protons; Random access memory; Single event upset;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and Its Effects on Components and Systems, 1997. RADECS 97. Fourth European Conference on
Conference_Location
Cannes
Print_ISBN
0-7803-4071-X
Type
conf
DOI
10.1109/RADECS.1997.698984
Filename
698984
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