DocumentCode
2818529
Title
An extended hydrodynamic model for silicon nano wires
Author
Muscato, O. ; Stefano, V.D.
Author_Institution
Dipt. di Mat. e Inf., Univ. di Catania, Catania, Italy
fYear
2012
fDate
22-25 May 2012
Firstpage
1
Lastpage
4
Abstract
We present an extended hydrodynamic model describing the transport of electrons in the axial direction of a silicon nanowire. This model has been formulated by closing the moment system derived from the Boltzmann equations on the basis of the maximum entropy principle of Extended Thermodynamics, coupled to the Effective Mass and Poisson equations. Explicit closure relations for the high-order fluxes and the production terms are obtained without any fitting procedure, including scattering of electrons with acoustic and non polar optical phonons. By using this model, thermoelectric effects have been investigated.
Keywords
Boltzmann equation; Poisson equation; effective mass; electron-phonon interactions; elemental semiconductors; hydrodynamics; maximum entropy methods; nanowires; silicon; thermodynamics; thermoelectricity; Boltzmann equations; Poisson equations; Si; axial direction; effective mass; electron transport; extended hydrodynamic model; extended thermodynamics; high-order fluxes; maximum entropy principle; moment system; silicon nanowires; thermoelectric effects; Entropy; Equations; Hydrodynamics; Mathematical model; Numerical models; Silicon; Thermodynamics;
fLanguage
English
Publisher
ieee
Conference_Titel
Computational Electronics (IWCE), 2012 15th International Workshop on
Conference_Location
Madison, WI
Print_ISBN
978-1-4673-0705-5
Type
conf
DOI
10.1109/IWCE.2012.6401951
Filename
6401951
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