A New Quasi Ballistic Model for Strained MOSFET.

Author

Fuchs, E. ; Orain, S. ; Ortolland, C. ; Dollfus, P. ; Le Carval, G. ; Villanueva, D. ; Dray, A. ; Jaouen, H. ; Skotnicki, T.

Author_Institution

ST Microlelectronics, IEF, CNRS-University Paris 11, Orsay, France and CEA LETI/D2NT/LSCDP Grenoble, France. E-mail: emmanuel.fuchs@st.com, Phone: +33 4 76 92 26 75.

fYear

2005

fDate

01-03 Sept. 2005

Firstpage

303

Lastpage

306

Abstract

An analytical model for the nano-MOSFET based on the determination of ballistic and backscattering probabilities along the channel is developed. This model, validated by analysis of transport in device using scattering spectroscopy, has been used to model the strained MOSFET by evaluating the appropriate scattering relaxation times and the carrier distribution. Finally, it has been used to determine the impact of CESL on the IONenhancement.

Keywords

Analytical models; Backscatter; Capacitive sensors; Computational modeling; Distributed computing; Finite element methods; MOSFET circuits; Scattering; Spectroscopy; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 2005. SISPAD 2005. International Conference on

Print_ISBN

4-9902762-0-5

Type

conf

DOI

10.1109/SISPAD.2005.201533

Filename

1562085

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2818531