Title :
Improved selective area growth properties in metalorganic vapor phase epitaxy by adding HCl
Author_Institution :
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
Abstract :
Selective area growth (SAG) of InP on a planar substrate by metalorganic vapor phase epitaxy (MOVPE) is an attractive way to integrate optical devices. To improve the growth mode of SAG, the author has added hydrogen chloride (HCl) to conventional MOVPE, and discusses the flatness, thickness enhancement ratio, and crystalline quality of Cl-assisted SAG
Keywords :
III-V semiconductors; MOCVD; indium compounds; integrated optics; semiconductor epitaxial layers; semiconductor growth; surface topography; vapour phase epitaxial growth; Cl-assisted SAG; HCl; InP; MOVPE; crystalline quality; flatness; growth mode; hydrogen chloride; integrated optical devices; metalorganic vapor phase epitaxy; planar substrate; selective area growth; thickness enhancement ratio; Epitaxial growth; Epitaxial layers; Gases; Human computer interaction; Hydrogen; Indium phosphide; Inductors; Scanning electron microscopy; Substrates; Surface morphology;
Conference_Titel :
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location :
Tsukuba
Print_ISBN :
0-7803-4220-8
DOI :
10.1109/ICIPRM.1998.712468
