Title :
DARPA´s Nitride Electronic NeXt Generation Technology Program
Author :
Albrecht, John D. ; Chang, Tsu-Hsi ; Kane, Avinash S. ; Rosker, Mark J.
Author_Institution :
Defense Adv. Res. Projects Agency, Arlington, VA, USA
Abstract :
DARPA/MTO has sponsored electronics programs to exploit the unique combination of high intrinsic breakdown voltages, high electron saturation velocities, and large sheet carrier densities of the nitride material system. The NEXT program is pushing III-N-based HEMTs toward its operating frequency (size) scaling limits by simultaneously minimizing carrier transit time, maximizing electron density, reducing access resistances and optimizing parasitic capacitances with innovative epitaxial structures and dielectric heterointerfaces. The Phase I goals of the NEXT program are to demonstrate 300 GHz D-mode and 200 GHz E-mode HEMTs while maintaining the breakdown voltage and transistor cutoff frequency product of more than 5 THz·Volt. The final goal of the NEXT program is to enable a 1000-transistor, high-yield, 500 GHz E/D-mode GaN technology for mixed signal applications.
Keywords :
dielectric properties; electron density; high electron mobility transistors; nitrogen compounds; DARPA; III-N-based HEMT; NEXT program; breakdown voltage; carrier density; dielectric heterointerface; electron density; epitaxial structure; frequency 200 GHz; frequency 300 GHz; high electron saturation velocity; nitride electronic next generation technology; parasitic capacitance; Gallium nitride; HEMTs; Logic gates; MODFETs; Materials; Radio frequency;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium (CSICS), 2010 IEEE
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4244-7437-0
Electronic_ISBN :
1550-8781
DOI :
10.1109/CSICS.2010.5619581