• DocumentCode
    2819019
  • Title

    Single Event Transient and ELDRS Characterization Test Results for LM4050QML 2.5V Precision Reference

  • Author

    Kruckmeyer, Kirby ; Morozumi, Elisa ; Eddy, Robert ; Trinh, Thang ; Santiago, Tom ; Maillard, Pierre

  • Author_Institution
    Nat. Semicond., Santa Clara, CA, USA
  • fYear
    2010
  • fDate
    20-23 July 2010
  • Firstpage
    6
  • Lastpage
    6
  • Abstract
    National Semiconductor´s 100 krad(Si) low dose rate qualified, 2.5V precision reference, LM4050WG2.5RLQV, was put through heavy ion testing and an enhanced low dose rate sensitivity (ELDRS) characterization. The results are presented here.
  • Keywords
    integrated circuit testing; ion beam effects; radiation hardening (electronics); reference circuits; silicon; ELDRS characterization test results; LM4050QML precision reference; Si; enhanced low dose rate sensitivity characterization; heavy ion testing; low dose rate qualified; single event transient; voltage 2.5 V; Capacitors; Ion beams; Leg; Radiation effects; Resistors; Testing; Transient analysis;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation Effects Data Workshop (REDW), 2010 IEEE
  • Conference_Location
    Denver, CO
  • ISSN
    2154-0519
  • Print_ISBN
    978-1-4244-8405-8
  • Type

    conf

  • DOI
    10.1109/REDW.2010.5619582
  • Filename
    5619582
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2819019