Title :
Investigation of Low-Frequency Noise in p-type Nanowire FETs: Effect of Switched Biasing Condition and Embedded SiGe Layer
Author :
Sang-Hyun Lee ; Ye-Ram Kim ; Jae-Ho Hong ; Eui-Young Jeong ; Jun-Sik Yoon ; Chang-Ki Baek ; Dong-Won Kim ; Jeong-Soo Lee ; Yoon-Ha Jeong
Author_Institution :
Dept. of Electr. Eng., Pohang Univ. of Sci. & Technol., Pohang, South Korea
Abstract :
The low-frequency noise (LFN) of a p-type nanowire FET (p-NWFET) was characterized and compared with that of an n-type NWFET (n-NWFET) in terms of dominant noise source and its location in the channel region. An inverse proportional dependence of the noise level on channel diameter was observed in the p-NWFET but not in the n-NWFET. The LFN was observed to be mainly generated by Hooge mobility fluctuation in the p-NWFET. Under a switched biasing condition, p-NWFET showed no substantial LFN reduction (in contrast to the n-NWFET), indicating that the carrier number fluctuation was insignificant. This was due to the compressive stress induced by embedded SiGe with heavier transverse effective hole mobility.
Keywords :
Ge-Si alloys; carrier density; field effect transistors; hole mobility; nanowires; Hooge mobility fluctuation; LFN; SiGe; carrier number fluctuation; channel diameter; channel region location; compressive stress; dominant noise source; embedded SiGe; inverse proportional dependence; low-frequency noise; n-NWFET; n-type NWFET; noise level; p-NWFET; p-type nanowire FET; switched biasing condition; transverse effective hole mobility; Logic gates; Low-frequency noise; Scattering; Silicon; Silicon germanium; Switches; Nanowire FET; low frequency noise; switched biasing 1/f noise; switched biasing 1/f noise.;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2014.2323255
