DocumentCode
281917
Title
Advances in submicron bipolar technology-current status and future prospects
Author
Hunt, P.C.
Author_Institution
Plessey Res. Caswell Ltd., Towcester, UK
fYear
1989
fDate
32637
Firstpage
42370
Lastpage
42376
Abstract
Bipolar circuit operation at above 10 GHz has now been demonstrated by several companies. The current state of the art is an advanced double polysilicon structure using one micron feature sizes and submicron effective emitter widths. In the future as device dimensions are reduced down to the half micron level and below, the current device structure will be abandoned due to scaling limitations. A discussion of the future devices outlining two possible alternate structures is given
Keywords
bipolar integrated circuits; integrated circuit technology; 1 micron; advanced double polysilicon structure; circuit operation; current device structure; device dimensions; feature sizes; scaling; submicron bipolar technology; submicron effective emitter widths;
fLanguage
English
Publisher
iet
Conference_Titel
Sub-Micron Silicon Engineering, IEE Colloquium on
Conference_Location
London
Type
conf
Filename
198406
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