Advances in submicron bipolar technology-current status and future prospects

Bipolar circuit operation at above 10 GHz has now been demonstrated by several companies. The current state of the art is an advanced double polysilicon structure using one micron feature sizes and submicron effective emitter widths. In the future as device dimensions are reduced down to the half micron level and below, the current device structure will be abandoned due to scaling limitations. A discussion of the future devices outlining two possible alternate structures is given