Title :
Progress in GaInNAs semiconductor lasers
Author :
Kondow, M. ; Larson, C. ; Kitatani, T. ; Nakahara, K. ; Uomi, K.
Author_Institution :
RWCP Opt. Interconnection, Hitachi Lab., Tokyo, Japan
Abstract :
This paper reviews our recent progress in GaInNAs/GaAs long-wavelength lasers. GaInNAs has been applied in both edge-emitting and vertical-cavity surface-emitting lasers. We have experimentally demonstrated that the GaInNAs laser diodes are very promising to overcome the poor temperature behavior of the conventional InGaAsP-based long-wavelength lasers
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; quantum well lasers; reviews; surface emitting lasers; GaInNAs semiconductor lasers; GaInNAs-GaAs; GaInNAs/GaAs long-wavelength lasers; edge-emitting lasers; laser diodes; review; temperature behavior; vertical-cavity surface-emitting lasers; Diode lasers; Gallium arsenide; Laboratories; Optical surface waves; Semiconductor lasers; Substrates; Surface emitting lasers; Temperature; Vertical cavity surface emitting lasers; Wavelength measurement;
Conference_Titel :
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location :
Tsukuba
Print_ISBN :
0-7803-4220-8
DOI :
10.1109/ICIPRM.1998.712470
