Title :
High quality InGaAsN growth by MOVPE using N2 carrier gas and dimethylhydrazine, tertiarybutylarsine as group V precursors
Author :
Ougazzaden, A. ; Rao, E.V.K. ; Sermage, B. ; Leprince, L. ; Gauneaut, M.
Author_Institution :
France Telecom, CNET, Bagneux, France
Abstract :
We have successfully grown GaAsN and InGaAsN layers on GaAs substrate using atmospheric pressure MOVPE. Dimethylhydrazine and tertiarybutylarsine have been employed as sources of nitrogen and arsenic respectively. To investigate the incorporation behaviour of nitrogen in GaAsN and InGaAsN layers as function of ambient gas in the reactor, the growth was performed under H2 and N2 gases. Good structural quality and surface morphology have been obtained with both gases. Furthermore, with N2 ambient gas an enhancement of indium and nitrogen incorporation have been observed. The nonradiative carrier lifetime is about 25 ns independent of ambient gas. This value is good enough for laser applications
Keywords :
III-V semiconductors; MOCVD; carrier lifetime; gallium arsenide; gallium compounds; indium compounds; nonradiative transitions; semiconductor epitaxial layers; semiconductor growth; stoichiometry; surface structure; vapour phase epitaxial growth; wide band gap semiconductors; 25 ns; GaAs; GaAs substrate; GaAsN; H2; InGaAsN; MOVPE; N2 carrier gas; atmospheric pressure MOVPE; dimethylhydrazine; group V precursors; high quality InGaAsN growth; laser applications; nonradiative carrier lifetime; structural quality; surface morphology; tertiarybutylarsine; Charge carrier lifetime; Epitaxial growth; Epitaxial layers; Gallium arsenide; Gas lasers; Gases; Indium; Inductors; Nitrogen; Surface morphology;
Conference_Titel :
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location :
Tsukuba
Print_ISBN :
0-7803-4220-8
DOI :
10.1109/ICIPRM.1998.712471
