Title :
A Metamorphic HEMT S-MMIC Amplifier with 16.1 dB Gain at 460 GHz
Author :
Tessmann, A. ; Leuther, A. ; Loesch, R. ; Seelmann-Eggebert, M. ; Massler, H.
Author_Institution :
Fraunhofer Inst. for Appl. Solid State Phys. IAF, Freiburg, Germany
Abstract :
In this paper, we present a four-stage submillimeter-wave monolithic integrated circuit (S-MMIC) amplifier for use in next generation radar and communication systems operating in the WR-2.2 waveguide band (325 - 500 GHz). The low-noise amplifier circuit (LNA) has been realized using a 35 nm InAlAs/InGaAs based metamorphic high electron mobility transistor (mHEMT) technology and demonstrates a peak gain of 16.1 dB at 460 GHz and a small-signal gain of more than 13 dB in the bandwidth from 433 to 465 GHz. The use of grounded coplanar waveguide (GCPW) topology in combination with a very compact design resulted in a die size of only 0.37 × 0.63 mm2.
Keywords :
MMIC amplifiers; high electron mobility transistors; low noise amplifiers; communication system; frequency 325 GHz to 500 GHz; gain 16.1 dB; grounded coplanar waveguide topology; low-noise amplifier circuit; metamorphic HEMT S-MMIC amplifier; metamorphic high electron mobility transistor; radar; submillimeter-wave monolithic integrated circuit amplifier; Gain; Indium phosphide; Logic gates; Microwave amplifiers; Scattering parameters; mHEMTs;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium (CSICS), 2010 IEEE
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4244-7437-0
Electronic_ISBN :
1550-8781
DOI :
10.1109/CSICS.2010.5619608
