DocumentCode
2819577
Title
One-dimensional analytical modeling of the VDMOS transistor taking into account the thermoelectrical interactions
Author
Lallement, C. ; Bouchakour, R. ; Maurel, T.
Author_Institution
Dept. d´´Electronique, Telecom Paris, France
Volume
1
fYear
1994
fDate
3-5 Aug 1994
Firstpage
682
Abstract
We have developed an analytical one-dimensional thermoelectrical model for the power MOSFET transistor, implemented in the SABER circuits simulator, in which the device´s temperature becomes an interactive variable during the simulation. The accuracy of the model is improved with an electrical and thermal characterization, and two validation circuits
Keywords
circuit analysis computing; digital simulation; power MOSFET; semiconductor device models; transient analysis; SABER circuits simulator; VDMOS transistor; electrical characterization; interactive variable; one-dimensional analytical modeling; power MOSFET transistor; thermal characterization; thermoelectrical interactions; validation circuits; Analytical models; Circuit simulation; Electronic packaging thermal management; Impedance; Power MOSFET; Resistance heating; Temperature dependence; Temperature sensors; Thermoelectric devices; Thermoelectricity;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 1994., Proceedings of the 37th Midwest Symposium on
Conference_Location
Lafayette, LA
Print_ISBN
0-7803-2428-5
Type
conf
DOI
10.1109/MWSCAS.1994.519385
Filename
519385
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