Title :
RF Receiver Front End for 868.6-MHz Band IEEE 802.15.4 PSSS Standard
Author :
Anis, M. ; Grau, G. ; Wolf, A. ; Kraemer, R.
Author_Institution :
advICo Microelectron. GmbH, Recklinghausen, Germany
Abstract :
This paper presents an IEEE 802.15.4 868.6MHz band PSSS RF receiver front end. The wideband inductorless differential LNA, mixer and digitally controlled VGA based on multi-tanh principle with emitter degenerative configuration are implemented to fulfill the linearity requirement according to the PSSS standard. The test chip is implemented in a 0.25um SiGe BiCMOS technology. The LNA has a gain of 14dB with a 2.4dB NF at 868MHz. The noise figure varies between 2.35dB to 2.6 dB from 550MHz to 1.25GHz. The measured S11<;-10dB and S22<; -10 dB for the frequency range from 650MHz to 3GHz. Two-tone test measurements indicate a 5 dBm input third-order intercept point. The linearity is achieved with an overall receiver front-end gain of 60dB/10dB for input levels of -90dBm/-20dBm. The RF receiver front-end dissipates 12mA from a 2.5-V supply.
Keywords :
BiCMOS integrated circuits; IEEE standards; low noise amplifiers; mixers (circuits); monolithic integrated circuits; personal area networks; radiofrequency spectra; receivers; silicon compounds; BiCMOS technology; IEEE 802.15.4 PSSS standard; RF receiver front end; SiGe; current 12 mA; digitally controlled VGA; emitter degenerative configuration; frequency 550 MHz to 1.25 GHz; frequency 650 MHz to 3 GHz; gain 14 dB; mixer; multi-tanh principle; noise figure 2.35 dB to 2.6 dB; size 0.25 mum; voltage 2.5 V; wideband inductorless differential LNA; Gain; Impedance matching; Linearity; Mixers; Radio frequency; Receivers; Transistors;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium (CSICS), 2010 IEEE
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4244-7437-0
Electronic_ISBN :
1550-8781
DOI :
10.1109/CSICS.2010.5619611
