A Fundamental Upconverting Gilbert Mixer for 100 GHz Wireless Applications

Author

Gavell, Marcus ; Ferndahl, Mattias ; Zirath, Herbert ; Urteaga, Miguel ; Pierson, Richard

Author_Institution

Microwave Electron. Lab., Chalmers Univ. of Technol., Göteborg, Sweden

fYear

2010

fDate

3-6 Oct. 2010

Firstpage

1

Lastpage

4

Abstract

The design and characterization of an up-converting double balanced Gilbert cell mixer in a 0.5 μm InP DHBT process for applications in the 81-102 GHz range is presented. The process features a 4-metal layer stackup that invites to more complex designs compared to most III-V technologies. The presented mixer is a double balanced Gilbert cell design and includes an LO buffer amplifier as well as RF and LO Marchand baluns integrated on chip. The Gilbert cell mixer show excellent results in terms of; conversion gain of 13 dB, LO-RF isolation of 47 dB, output P1dB equals -10 dBm and the total power consumption is 170 mW. The frequency bandwidth covers 81 to 102 GHz.

Keywords

III-V semiconductors; amplifiers; bipolar transistors; indium compounds; mixers (circuits); Gilbert cell mixer; III-V technologies; InP; InP DHBT process; LO Marchand balun; LO buffer amplifier; RF balun; bandwidth 81 GHz to 102 GHz; frequency 100 GHz; power 170 mW; size 0.5 micron; wireless application; DH-HEMTs; Gain; Indium phosphide; Mixers; Power demand; Radio frequency; Wireless communication;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Integrated Circuit Symposium (CSICS), 2010 IEEE

Conference_Location

Monterey, CA

ISSN

1550-8781

Print_ISBN

978-1-4244-7437-0

Electronic_ISBN

1550-8781

Type

conf

DOI

10.1109/CSICS.2010.5619615

Filename

5619615