A bias circuit based on resistorless bandgap reference in 0.35-μm SOI CMOS

Author

Tekin, Ahmet ; Zencir, Ertan ; Huang, Douglas ; Dogan, Numan S. ; Ketel, Mohammed ; Arvas, Ercument

Author_Institution

Dept. of Electr. & Comput. Eng.,, North Carolina A&T State Univ., Greensboro, NC, USA

Volume

1

fYear

2003

fDate

27-30 Dec. 2003

Firstpage

149

Abstract

A bias circuit based on resistorless bandgap reference is designed and fabricated in 0.35-μm silicon-on-insulator (SOI) CMOS. The reference voltage generated by the bandgap core which is arranged to give zero temperature coefficient (ZTC) around room temperature is buffered across a resistor to yield a constant current. This constant current is then mirrored to rationed resistors to give desired constant output voltage levels. The reference voltage is generated using inverse function technique which does not require the use of resistors in the bandgap core. Experimental results demonstrate that the largest bias voltage (1.766 V) has shown only 5 mV variation over the temperature range (20 °C to 125 °C).

Keywords

CMOS integrated circuits; reference circuits; silicon-on-insulator; 0.35 micron; 1.766 V; 20 to 125 C; bias circuit; reference voltage; resistorless bandgap reference; silicon on insulator CMOS; zero temperature coefficient; Circuit simulation; Current supplies; Diodes; Integrated circuit measurements; Operational amplifiers; Photonic band gap; Resistors; Temperature distribution; Temperature sensors; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2003 IEEE 46th Midwest Symposium on

ISSN

1548-3746

Print_ISBN

0-7803-8294-3

Type

conf

DOI

10.1109/MWSCAS.2003.1562240

Filename

1562240