Title :
Single-Polarity Power Supply Bootstrapped Comparator for GaN Smart Power Technology
Author :
Liu, Xiaosen ; Chen, Kevin J.
Author_Institution :
Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China
Abstract :
A high-performance bootstrapped comparator operating with a single-polarity power supply is demonstrated for the development of GaN smart power ICs. The comparator features monolithically integrated enhancement-mode (E-mode) and depletion mode (D-mode) AlGaN/GaN HEMTs. The tail current source uses E-mode HEMT, enabling single-polarity power supply. The input stage could be either E-mode or D-mode HEMTs to cover a wide voltage range (from 0 to 6 V), while the bootstrapped loads are implemented with D-mode HEMTs. At room temperature, the comparator delivers a voltage gain as high as 132 V/V and a unity-gain bandwidth of 270 MHz. The comparator is also capable of operating at 250 °C with temperature-compensated bias.
Keywords :
III-V semiconductors; aluminium compounds; bootstrap circuits; comparators (circuits); gallium compounds; high electron mobility transistors; monolithic integrated circuits; power integrated circuits; AlGaN-GaN; D-mode; E-mode; GaN; HEMT; bandwidth 270 MHz; bootstrapped loads; depletion mode; high-performance bootstrapped comparator; monolithically integrated enhancement-mode; single-polarity power supply bootstrapped comparator; smart power IC; smart power technology; tail current source; temperature 250 C; unity-gain bandwidth; voltage 0 V to 6 V; voltage gain; Aluminum gallium nitride; Gallium nitride; HEMTs; MODFETs; Power supplies; Temperature; Temperature measurement;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium (CSICS), 2010 IEEE
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4244-7437-0
Electronic_ISBN :
1550-8781
DOI :
10.1109/CSICS.2010.5619644
