Title :
Low threshold CW lasing of closely-stacked self-organized InAs/GaAs quantum dots
Author :
Mukai, K. ; Nakata, Y. ; Shoji, H. ; Sugawara, M. ; Ohtsubo, K. ; Futatsugi, T. ; Sugiyama, Y. ; Okoyama, N. ; Ishikawa, H.
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
Abstract :
We achieved low threshold CW lasing of a new type of self-organized dots. The dots have a columnar shape, and were fabricated using MBE by stacking closely the Stranski-Krastanov (SK) dot in growth direction with monolayer-thick intermediate layers. Uniformity was improved comparing to the single SK dots. The dot laser with cleaved facets operated at the threshold current of 31 mA at room temperature with current density of 250 A/cm2 per a single dot layer
Keywords :
III-V semiconductors; current density; gallium arsenide; indium compounds; molecular beam epitaxial growth; quantum well lasers; semiconductor growth; semiconductor quantum dots; 31 mA; InAs-GaAs; MBE; Stranski-Krastanov dot; closely-stacked self-organized InAs/GaAs quantum dots; columnar shape; current density; growth direction; low threshold CW lasing; monolayer-thick intermediate layers; Epitaxial growth; Gallium arsenide; Molecular beam epitaxial growth; Quantum dot lasers; Quantum dots; Semiconductor lasers; Shape; Stacking; Temperature dependence; US Department of Transportation;
Conference_Titel :
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location :
Tsukuba
Print_ISBN :
0-7803-4220-8
DOI :
10.1109/ICIPRM.1998.712473
