Title :
Analysis of single event effects at grazing angle
Author :
Campbell, A.B. ; Musseau, O. ; Ferlet-Cavrois, V. ; Stapor, W.J. ; McDonald, P.T.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
Abstract :
Investigation of single event effects at grazing angle by both charge collection and multiple bit upset measurements evidences modified collection mechanisms with charge transfer between adjacent reverse biased structures
Keywords :
integrated circuit testing; ion beam effects; charge collection; charge transfer; grazing angle; heavy ion irradiation; integrated circuit; multiple bit upset; reverse biased structure; single event effect; CMOS technology; Charge transfer; Current measurement; Integrated circuit measurements; Ion accelerators; Ionization; Isolation technology; Laboratories; Random access memory; Space charge;
Conference_Titel :
Radiation and Its Effects on Components and Systems, 1997. RADECS 97. Fourth European Conference on
Conference_Location :
Cannes
Print_ISBN :
0-7803-4071-X
DOI :
10.1109/RADECS.1997.698992