An X-Band 50W-Output/30%-PAE GaN Power Amplifier with Bandwidth/Ripple-Optimized Bandpass Impedance-Matching Networks

Author

Uchida, H. ; Kuwata, E. ; Ohtsuka, H. ; Yamanaka, K. ; Yamauchi, K. ; Mori, K. ; Nakayama, M. ; Inoue, A. ; Hirano, Y.

Author_Institution

Mitsubishi Electr. Corp., Kamakura, Japan

fYear

2010

fDate

3-6 Oct. 2010

Firstpage

1

Lastpage

4

Abstract

An X-band 50 W GaN power amplifier (PA) is presented, mainly focusing on its impedance-matching networks to realize a specified operating bandwidth of 18%. Bandpass impedance-matching networks (IMNs) with Chebyshev response are adopted in the PA, where a FET and a pre-matching transmission line can be approximately seen as a shunt parallel-resonant circuit. Mismatch-loss ripple of the Chebyshev IMN can be theoretically optimized in terms of Q-factor of the FET and a specified operational bandwidth. The designed PA has achieved an output power of 50 W and a power-added efficiency (PAE) of more than 30% in the 18% relative bandwidth.

Keywords

Q-factor; field effect transistors; impedance matching; power amplifiers; Chebyshev IMN; Chebyshev response; FET; GaN; GaN power amplifier; Q-factor; bandwidth/ripple-optimized bandpass impedance-matching networks; mismatch-loss ripple; power 50 W; power-added efficiency; prematching transmission line; shunt parallel-resonant circuit; Bandwidth; Gallium nitride; HEMTs; MODFETs; Microwave amplifiers; Power amplifiers; Transmission line measurements;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Integrated Circuit Symposium (CSICS), 2010 IEEE

Conference_Location

Monterey, CA

ISSN

1550-8781

Print_ISBN

978-1-4244-7437-0

Electronic_ISBN

1550-8781

Type

conf

DOI

10.1109/CSICS.2010.5619651

Filename

5619651