Title :
An X-Band 50W-Output/30%-PAE GaN Power Amplifier with Bandwidth/Ripple-Optimized Bandpass Impedance-Matching Networks
Author :
Uchida, H. ; Kuwata, E. ; Ohtsuka, H. ; Yamanaka, K. ; Yamauchi, K. ; Mori, K. ; Nakayama, M. ; Inoue, A. ; Hirano, Y.
Author_Institution :
Mitsubishi Electr. Corp., Kamakura, Japan
Abstract :
An X-band 50 W GaN power amplifier (PA) is presented, mainly focusing on its impedance-matching networks to realize a specified operating bandwidth of 18%. Bandpass impedance-matching networks (IMNs) with Chebyshev response are adopted in the PA, where a FET and a pre-matching transmission line can be approximately seen as a shunt parallel-resonant circuit. Mismatch-loss ripple of the Chebyshev IMN can be theoretically optimized in terms of Q-factor of the FET and a specified operational bandwidth. The designed PA has achieved an output power of 50 W and a power-added efficiency (PAE) of more than 30% in the 18% relative bandwidth.
Keywords :
Q-factor; field effect transistors; impedance matching; power amplifiers; Chebyshev IMN; Chebyshev response; FET; GaN; GaN power amplifier; Q-factor; bandwidth/ripple-optimized bandpass impedance-matching networks; mismatch-loss ripple; power 50 W; power-added efficiency; prematching transmission line; shunt parallel-resonant circuit; Bandwidth; Gallium nitride; HEMTs; MODFETs; Microwave amplifiers; Power amplifiers; Transmission line measurements;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium (CSICS), 2010 IEEE
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4244-7437-0
Electronic_ISBN :
1550-8781
DOI :
10.1109/CSICS.2010.5619651
