DocumentCode :
2819965
Title :
An mHEMT Q-Band Integrated LNA and Vector Modulator MMIC
Author :
Lynch, J. ; Traut, F.A. ; Benson, K. ; Tshudy, R.
Author_Institution :
Hittite Microwave Corp., Chelmsford, MA, USA
fYear :
2010
fDate :
3-6 Oct. 2010
Firstpage :
1
Lastpage :
4
Abstract :
We present a Q-band high performance integrated LNA and vector modulator MMIC. The overall MMIC shows a maximum gain of 11 dB at 44 GHz. Full 360-degree phase coverage and a maximum attenuation range of over 40 dB has been achieved. With software calibration, we have demonstrated phase steps as low as 0.4 degrees and amplitude steps of 0.06 dB. An overall noise figure for the integrated MMIC of 3.5 dB has been measured. The results show the excellent performance and high integration level possible with mHEMT technology at millimeter-wave frequencies. To our knowledge, this is the first reported single- chip integration of an LNA and vector modulator at Q-band.
Keywords :
HEMT circuits; MMIC amplifiers; low noise amplifiers; Q-band integrated LNA; mHEMT; phase coverage; vector modulator MMIC; Frequency modulation; MMICs; Noise; Performance evaluation; Resistance; mHEMTs;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium (CSICS), 2010 IEEE
Conference_Location :
Monterey, CA
ISSN :
1550-8781
Print_ISBN :
978-1-4244-7437-0
Electronic_ISBN :
1550-8781
Type :
conf
DOI :
10.1109/CSICS.2010.5619652
Filename :
5619652
Link To Document :
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