Title :
Traffic-thermal mutual-coupling co-simulation platform for three-dimensional Network-on-Chip
Author :
Jheng, Kai-Yuan ; Chao, Chih-Hao ; Wang, Hao-Yu ; Wu, An-Yeu
Author_Institution :
Grad. Inst. of Electron. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
Thermal issue is one of the major challenges in the research field of three-dimensional (3D) IC. Network-on-Chip (NoC) has been viewed as a practical communication infrastructure for 3D IC. To facilitate such research, an accurate and non-proprietary environment for simulating the NoC traffic and temperature is necessary. In this paper, we present a traffic-thermal mutual-coupling co-simulation platform for 3D NoC. The translation error is eliminated, and therefore our co-simulation has no accuracy loss on mutual coupling. Our simulation results, validated with a commercial tool, show the temperature error of our platform is between -1 and 4 K. The simulation results also show the thermal profile of 3D NoC, in which the temperature is imbalance even under the balanced traffic. Hence, the proposed platform can be used for 3D thermal-aware design, 3D dynamic thermal management technology, and other related researches in the future.
Keywords :
integrated circuit design; network-on-chip; thermal management (packaging); three-dimensional integrated circuits; 3D IC; 3D NoC; 3D dynamic thermal management technology; 3D thermal-aware design; NoC traffic; balanced traffic; communication infrastructure; mutual coupling; temperature -1 K to 4 K; thermal issue; thermal profile; three-dimensional IC; three-dimensional network-on-chip; traffic-thermal mutual-coupling co-simulation platform; translation error; Energy management; Mutual coupling; Network-on-a-chip; Power system modeling; Technology management; Telecommunication traffic; Temperature; Thermal management; Three-dimensional integrated circuits; Traffic control;
Conference_Titel :
VLSI Design Automation and Test (VLSI-DAT), 2010 International Symposium on
Conference_Location :
Hsin Chu
Print_ISBN :
978-1-4244-5269-9
Electronic_ISBN :
978-1-4244-5271-2
DOI :
10.1109/VDAT.2010.5496709