Title :
SEU sensitive depth in a submicron SRAM technology
Author :
Detcheverry, C. ; Ecoffet, R. ; Duzellier, S. ; Lorfevre, E. ; Bruguier, G. ; Barak, J. ; Lifshitz, Y. ; Palau, J.M. ; Gasiot, J.
Author_Institution :
Centre d´´Electron., Univ. des Sci. et Tech. du Languedoc, Montpellier, France
Abstract :
This work determines experimentally and by simulation the SEU sensitive depth in a 0.6 μm SRAM technology. A good correlation is obtained between the two studies in the case of heavy ions deposing energy close to the critical energy. Other simulation results complete the first investigation by studying the minimum sensitive depth for ions deposing higher energies (at greater LET)
Keywords :
SRAM chips; ion beam effects; 0.6 micron; LET; SEU sensitive depth; critical energy; energy deposition; heavy ion irradiation; simulation; submicron SRAM technology; Analytical models; CMOS technology; Circuit simulation; Context modeling; Error analysis; Extraterrestrial phenomena; Random access memory; Single event upset; Space technology; Switches;
Conference_Titel :
Radiation and Its Effects on Components and Systems, 1997. RADECS 97. Fourth European Conference on
Conference_Location :
Cannes
Print_ISBN :
0-7803-4071-X
DOI :
10.1109/RADECS.1997.698994
