Title :
Development of 90Nm InGaAs HEMTs and Benchmarking Logic Performance with Si CMOS
Author :
Cheng, Kuang-Yu (Donald) ; Chan, Doris ; Tan, Fei ; Xu, Huiming ; Feng, Milton ; Ko, Chih-Hsin ; Wann, Clement
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Illinois at Urbana-Champaign, Urbana, IL, USA
Abstract :
We have developed 90nm In0.7Ga0.3As channel HEMTs, directly measured of DC and RF characteristics, and performed microwave modeling for both 90nm Si CMOS and HEMT for benchmarking logic performance for future design layout and process improvement.
Keywords :
CMOS integrated circuits; III-V semiconductors; benchmark testing; high electron mobility transistors; indium compounds; silicon; CMOS; HEMT; In0.7Ga0.3As; Si; benchmarking logic performance; microwave modeling; size 90 nm; CMOS integrated circuits; HEMTs; Indium gallium arsenide; Logic gates; MODFETs; MOSFET circuits; Silicon;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium (CSICS), 2010 IEEE
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4244-7437-0
Electronic_ISBN :
1550-8781
DOI :
10.1109/CSICS.2010.5619674
