A Low 1/f Noise and High Reliability InP/GaAsSb DHBT for 76 GHz Automotive Radars

Author

Kanaya, Koh ; Amasuga, Hirotaka ; Watanabe, Shinsuke ; Yamamoto, Yoshitsugu ; Kosaka, Naoki ; Miyakuni, Shinichi ; Goto, Seiki ; Shima, Akihiro

Author_Institution

High Freq. & Opt. Device Works, Mitsubishi Electr. Corp., Itami, Japan

fYear

2010

fDate

3-6 Oct. 2010

Firstpage

1

Lastpage

4

Abstract

To develop a low 1/f noise and high reliability InP/GaAsSb DHBT, experimental analyses on the recombination current have been carried out. The results show that the recombination current that can affect 1/f noise and reliability originates from the surface of the base. We have optimized the ledge and passivation film on the base surface of InP/GaAsSb DHBT. The optimized DHBT offers 7 dB lower 1/f noise level than the non-optimized DHBT. Additionally, in the high temperature burn-in test, no degradation has been induced even after 1,000 hr. It can satisfy the criterion of automotive radars. The W-band oscillator with the optimized DHBT delivers a remarkably low phase noise of -107 dBc/Hz at 1MHz-offset. This phase noise is 10 dB lower than that of the non-optimized HBT oscillator. These results experimentally confirm that decreasing 1/f noise is effective for the design of a low phase noise oscillator using InP/GaAsSb DHBT. To our knowledge, this is the first report to reveal that the base surface structure of InP/GaAsSb DHBT is a key factor in the improvement of reliability and phase noise.

Keywords

1/f noise; III-V semiconductors; heterojunction bipolar transistors; indium compounds; oscillators; reliability; road vehicle radar; 1/f noise; DHBT; InP-GaAsSb; automotive radars; frequency 76 GHz; high temperature burn-in test; nonoptimized HBT oscillator; passivation film; DH-HEMTs; Heterojunction bipolar transistors; Indium phosphide; Phase noise; Reliability;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Integrated Circuit Symposium (CSICS), 2010 IEEE

Conference_Location

Monterey, CA

ISSN

1550-8781

Print_ISBN

978-1-4244-7437-0

Electronic_ISBN

1550-8781

Type

conf

DOI

10.1109/CSICS.2010.5619676

Filename

5619676