A Low Noise Integrated 0.3-16 GHz Differential Amplifier for Balanced Ultra Wideband Antennas

Author

Wadefalk, Niklas ; Kildal, Per-Simon ; Zirath, Herbert

Author_Institution

Chalmers Univ. of Technol., Gothenburg, Sweden

fYear

2010

fDate

3-6 Oct. 2010

Firstpage

1

Lastpage

4

Abstract

A 300 MHz-16 GHz, Low noise, wideband differential amplifier (active balun) for balanced ultra wideband antennas realized in a commercial low-cost 150 nm GaAs-mHEMT process, is described. The amplifier has demonstrated a differential gain of 25 dB and a common mode rejection of more than 30 dB. A 3-dB bandwidth of 16 GHz is achieved. The measured noise figure is below 1 dB in most of the band. A method for measuring noise figure of differential amplifiers at microwave frequencies is proposed and demonstrated experimentally.

Keywords

baluns; differential amplifiers; gallium arsenide; high electron mobility transistors; low noise amplifiers; ultra wideband antennas; GaAs; GaAs-mHEMT process; active balun; balanced ultra wideband antennas; differential amplifiers; frequency 0.3 GHz to 16 GHz; low noise integrated differential amplifier; wideband differential amplifier; Differential amplifiers; Gain; Impedance matching; Microwave amplifiers; Noise; Noise figure; Ultra wideband antennas;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Integrated Circuit Symposium (CSICS), 2010 IEEE

Conference_Location

Monterey, CA

ISSN

1550-8781

Print_ISBN

978-1-4244-7437-0

Electronic_ISBN

1550-8781

Type

conf

DOI

10.1109/CSICS.2010.5619677

Filename

5619677