Title :
Energy deposited by high energy neutrons and protons in silicon (comparison between HETC and COSMIC codes)
Author :
Vial, C. ; Palau, J.-M. ; Gasiot, J. ; Nadai, J.P. ; Calvet, M.-C. ; Fourtine, S. ; Roth, D. ; Bersillon, O.
Author_Institution :
Centre d´´Electron., Univ. des Sci. et Tech. du Languedoc, Montpellier, France
Abstract :
Comparison between HETC and COSMIC codes shows that COSMIC code, although being a protons-silicon interaction code, can be used to calculate the energy deposited by high energy neutrons in silicon
Keywords :
elemental semiconductors; energy loss of particles; neutron effects; proton effects; silicon; COSMIC code; HETC code; Si; energy deposition; neutron irradiation; proton irradiation; silicon; Aircraft; Astronomy; Atmosphere; Microelectronics; Neutrons; Physics; Protons; Silicon; Single event upset; Trajectory;
Conference_Titel :
Radiation and Its Effects on Components and Systems, 1997. RADECS 97. Fourth European Conference on
Conference_Location :
Cannes
Print_ISBN :
0-7803-4071-X
DOI :
10.1109/RADECS.1997.698995
